Semiconductor Memory Apparatus

ABSTRACT

A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a division of U.S. application Ser. No. 12/973,000 filed Dec.20, 2010, which claims the priority benefit under USC 119 of KR2009-0129751 filed Dec. 23, 2009, the entire respective disclosures ofwhich are incorporated herein by reference.

BACKGROUND

Exemplary embodiments relate generally to a semiconductor memoryapparatus and a method of operating the same and, more particularly, toa semiconductor memory apparatus including a plurality of memory blocksand a method of operating the same.

A semiconductor memory apparatus performs one of program, read, anderase operations of selected memory cells in response to a row addressand a column address.

More particularly, the semiconductor memory apparatus generally includesa plurality of memory blocks, and one of the plurality of memory blocksis selected in response to a block address included in the row address.Each of the memory blocks generally includes a plurality of word lines,and one of the plurality of word lines is selected in response to a wordline address included in the row address. Furthermore, one or more ofcells coupled to the selected word line are selected in response to thecolumn address. The selected cells can include a memory cell, aredundancy cell, a repair cell, and a flag cell.

In cases where the semiconductor memory apparatus inputs and outputsdata of 8 bytes, one memory block includes at least first to eighth I/Oblocks. Furthermore, each of the I/O blocks includes 1024 bit lines(that is, 1024 columns). Accordingly, 8192 (1024×8) memory cells arecoupled to one word line. If a large number of the memory cells arecoupled to one word line as described above, the length of the word linecan become long. Wirings to which voltages for the operations of memorycells are supplied are coupled to the word line. An operating voltage ofa low level is supplied to a memory cell which is far from a portionwhere the word line and the wirings are coupled together because of theresistance component of the word line.

Furthermore, interference can be generated between the word line and thewirings according to the arrangement of the memory blocks and a rowdecoder for selecting one of the memory blocks. Consequently, theoperating voltage supplied to the word line can be changed.

Meanwhile, with an increase of the number of memory blocks included in asemiconductor memory apparatus, the size of a row decoder for selectingone of the memory blocks is typically increased. If the area occupied bythe row decoder is increased within a limited memory chip, the areawhere the memory blocks are formed is reduced, affecting the degree ofintegration.

BRIEF SUMMARY

Exemplary embodiments relate to a semiconductor memory apparatus and amethod of operating the same, which are generally capable of reducing adifference in the level of an operating voltage supplied to memory cellscoupled to a word line, reducing a shift in the operating voltagesupplied to the word line because of interference between the word lineand wirings, and reducing the size of a row decoder.

A semiconductor memory apparatus according to an aspect of the presentdisclosure comprises first and second memory blocks, first and secondlocal line groups associated with each of the first and second memoryblocks, wherein each of the first and second memory blocks comprisesemiconductor elements coupled to their respective first and secondlocal line groups, first and second global line groups, a firstswitching circuit configured to couple the first global line group tothe first local line group of the first memory block in response to ablock selection signal, a second switching circuit configured to couplethe second global line group to the second local line groups of thefirst and second memory blocks in response to the block selectionsignal, and a third switching circuit configured to couple the firstglobal line group to the first local line group of the second memoryblock in response to the block selection signal.

The first memory block can preferably be disposed between the first andsecond switching circuits, and the second memory block can preferably bedisposed between the second and third switching circuits.

One of the first to third switching circuits can couple a global drainselect line and a global source select line to a local drain select lineand a local source select line of the first and second memory blocks.Preferably the first global line group comprises a first global dummyword line and a first global word line group, the second global linegroup comprises a second global dummy word line and a second global wordline group, the first local line group comprises a first local dummyword line, and first local word lines, and the second local line groupcomprises a second local dummy word line and second local word lines.

A semiconductor memory apparatus according to another aspect of thepresent disclosure preferably comprises first and second memory bankseach comprising a plurality of memory blocks, a voltage generationcircuit configured to output first and second operating voltages tofirst and second global line groups in response to an operation commandsignal, a row decoder configured to output block selection signals forselecting a memory block from the first and second memory banks inresponse to a row address signal, a first switching circuit groupconfigured to transfer the first operating voltages to a first memoryblock, selected from the first memory bank, in response to the blockselection signals, a second switching circuit group configured totransfer the second operating voltages to the first memory block and asecond memory block, selected from the second memory bank, in responseto the block selection signals, and a third switching circuit groupconfigured to transfer the first operating voltages to the second memoryblock in response to the block selection signals.

One of the first to third switching circuit groups can preferably couplea global drain select line and a global source select line to a localdrain select line and a local source select line of the first and secondmemory banks.

The first memory bank can preferably be disposed between the first andsecond switching circuit groups, and the second memory bank can bedisposed between the second and third switching circuit groups.

The semiconductor memory apparatus preferably further comprises blockselection lines for transferring the block selection signals, generatedby the row decoder, to the first to third switching circuit groups. Theblock selection lines preferably pass through or over a memory blockadjacent to a memory block, disposed between the first and secondswitching circuits, from the first switching circuit of the firstswitching circuit group to the second switching circuit of the secondswitching circuit group. The block selection lines preferably passthrough or over a memory block adjacent to a memory block, disposedbetween the second and third switching circuits, from the secondswitching circuit of the second switching circuit group to the thirdswitching circuit of the third switching circuit group.

In the block selection lines, portions passing through horizontally tothe local word lines of the memory block and portions passing throughvertically to the local word lines of the memory block are preferablyrepeated over the memory block disposed between the first and secondswitching circuits and over the memory block disposed between the secondand third switching circuits.

A semiconductor memory apparatus according to yet another aspect of thepresent disclosure preferably comprises first and second memory bankseach comprising a plurality of memory blocks, a voltage generationcircuit configured to output operating voltages in response to anoperation command signal, a row decoder configured to output blockselection signals for selecting a memory block from the first and secondmemory banks in response to a row address signal, and a switchingcircuit group configured to transfer the operating voltages to a firstmemory block, selected from the first memory bank, and a second memoryblock, selected from the second memory bank, in response to the blockselection signals. The switching circuit group can be disposed betweenthe first and second memory banks.

The semiconductor memory apparatus further preferably comprises blockselection lines for transferring the block selection signals, generatedby the row decoder, to the switching circuit group. One of the blockselection lines used to select an even memory block of the memory blockspreferably passes through or over an odd memory block from the rowdecoder to the switching circuit group, and one of the block selectionlines used to select an odd memory block of the memory blocks preferablypasses through or over an even memory block from the row decoder to theswitching circuit group.

The first memory block can preferably comprise some of first to eighthI/O memory blocks, a spare memory block, a repair memory block, and aflag cell block, and the second memory block can comprise memory blocksother than memory blocks included in the first memory block.

The first memory bank and the second memory bank preferably form oneplane.

A semiconductor memory apparatus according to still yet another aspectof the present disclosure preferably comprises a memory bank comprisinga plurality of memory blocks, a row decoder configured to output blockselection signals in response to a row address, first and secondswitching circuits disposed on both sides of the memory blocks andconfigured to transfer operating voltages to a selected memory block inresponse to the block selection signals, and block selection linesconfigured to transfer the block selection signals to the first andsecond switching circuits. The block selection lines are disposed topass through or over a memory block, neighboring a memory block disposedbetween the first and second switching circuits, between the first andsecond switching circuits.

In the block selection lines, portions passing through horizontally tothe local word lines of the memory block and a portion passing throughvertically to the local word lines of the memory block are repeated overthe memory block.

A semiconductor memory apparatus according to further yet another aspectof the present disclosure preferably comprises a memory cell arraycomprising a plurality of memory blocks classified into a plurality ofblock groups, a first subdecoder configured to output a first selectionsignal for outputting one of the block groups in response to an enablesignal and first row address signals, and a second subdecoder configuredto output a second selection signal or a third selection signal forselecting one of a pair of even and odd memory blocks from a blockgroup, selected by the first subdecoder, in response to the firstselection signal and a second row address signal.

The first row address signals preferably comprise first signalsgenerated by decoding a first block address signal used to classify thememory blocks into a plurality of first subblock groups, second signalsgenerated by decoding a second block address signal used to classify thefirst subblock group into a plurality of second subblock groups, andthree signals selected one by one from among third signals generated bydecoding a third block address signal used to classify the secondsubblock group into a plurality of third subblock groups.

The second row address signal preferably comprises two fourth signalsfor selecting a pair of even and odd memory blocks from among fourthsignals generated by decoding a fourth block address signal used toselect a memory block from the third subblock group.

The semiconductor memory apparatus can further comprise a first outputcircuit for outputting an even block selection signal in response to thesecond selection signal and a second output circuit for outputting anodd block selection signal in response to the third selection signal.The first output circuit preferably outputs the even block selectionsignal having a higher voltage level than the second selection signal,and the second output circuit preferably outputs the odd block selectionsignal having a higher voltage level than the third selection signal.

The first and second subdecoders and the first and second outputcircuits are preferably provided in each pair of the even and odd memoryblocks.

A method of operating a semiconductor memory apparatus according tostill yet another aspect of the present disclosure preferably comprisesproviding the semiconductor memory apparatus according to the aspects ofthe present disclosure, precharging the local word lines of the memoryblocks and then maintaining the local word lines in a floating state,and erasing the memory cells of the selected memory block by supplyingan erase pulse to a substrate in the state in which a ground voltage issupplied to the local word lines of the selected memory block.

Local word lines included in unselected memory blocks of the memoryblocks can preferably be precharged and then maintained in a floatingstate.

Alternatively, the local word lines of all the memory blocks canpreferably be precharged and then maintained in a floating state, andthe local word lines of the selected memory block can be discharged to aground voltage supplied for an erase operation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a semiconductor memory apparatus accordingto an exemplary embodiment of this disclosure;

FIGS. 2A to 2C are diagram showing a semiconductor memory apparatusaccording to another exemplary embodiment of this disclosure;

FIG. 3 is a block diagram showing part of the semiconductor memoryapparatus according to another exemplary embodiment of this disclosure;

FIG. 4 is a circuit diagram showing part of the semiconductor memoryapparatus according to another exemplary embodiment of this disclosure;

FIG. 5 is a block diagram of a semiconductor memory apparatus includinga row decoder according to an exemplary embodiment of this disclosure;and

FIG. 6 is a circuit diagram of the semiconductor memory apparatusincluding the row decoder according to an exemplary embodiment of thisdisclosure.

DESCRIPTION OF EMBODIMENTS

Hereinafter, some exemplary embodiments of the present disclosure willbe described in detail with reference to the accompanying drawingfigures. The drawing figures are provided to allow those having ordinaryskill in the art to understand the scope of the embodiments of thedisclosure.

FIG. 1 is a diagram showing a semiconductor memory apparatus accordingto an exemplary embodiment of this disclosure.

Referring to FIG. 1, the semiconductor memory apparatus includes amemory plane, a control circuit 120, a voltage generation circuit 130,row decoders 140A, 140B, 140C, and 140D, switching circuit groups 150A,150B, 150C, and 150D, a page buffer group 160, and a column selectioncircuit 170.

The memory plane includes a first memory bank 110A and a second memorybank 110B. The first memory bank 110A and the second memory bank 110Binclude a plurality of memory blocks MBa, MBb. Each of the memory blocksincludes a plurality of semiconductor elements coupled to local linesDSL, DWL2, WL[63:0], DWL1, and SSL. More particularly, the memory blocksinclude source select transistors (not shown) coupled to a local sourceselect line SSL, memory cells (not shown) coupled to a first local dummyword line DWL1, memory cells (not shown) coupled to a plurality of wordlines WL[63:0], memory cells (not shown) coupled to a second local dummyword line DWL2, and drain select transistors (not shown) coupled to alocal drain select line DSL. The above memory block is known in NANDflash memory devices. However, the structure of the memory block can bechanged according to the type of memory device.

In cases where a semiconductor memory apparatus inputs and outputs dataof 8 bytes, at least 8 I/O blocks are included in one memory block. Eachof the I/O blocks includes at least 1024 columns BLs (that is, bitlines). Accordingly, one memory block includes a total of at least 8192columns. In cases where the memory blocks further include a repair block(not shown), including repair columns for replacing failed columnsincluded in the I/O block, and a spare block (not shown) or a flag block(not shown) for storing status information of the I/O block, the numberof columns is further increased.

In this disclosure, half of all the columns can be disposed in the firstmemory block MBa, and the remaining half of the columns can be disposedin the second memory block MBb. In this case, there is an advantage inthat one memory block can be divided into two memory blocks. That is,there is an advantage in that one plane including a plurality of memoryblocks is divided into two planes. If one memory block is divided intotwo memory blocks, one local word line is divided into two, and anincrease of a resistance component, increasing with an increase of thelocal word line, can be reduced at least by half. Since the memory blockis divided into two, the constructions and the connection relationshipsof row decoders and switching circuit groups are changed.

The control unit 120 internally outputs a program signal PGM, a readsignal READ, or an erase signal ERASE in response to a command signalCMD and outputs control signals PB SIGNALS for controlling internalcircuits, such as the page buffer group 160. Furthermore, the controlunit 120 internally outputs a row address signal RADD and a columnaddress signal CADD in response to an address signal ADD.

The voltage generation circuit 130 outputs operating voltages forprogramming, reading, or erasing memory cells to global lines GSSL,GDWL1, GWL[63:0], GDWL2, and GDSL in response to the internal commandsignal PGM, READ, or ERASE of the control circuit 120. The global linesinclude a global source select line GSSL, a first global dummy word lineGDWL1, a plurality of global word lines GWL[63:0], a second global dummyword line GDWL2, and a global drain select line GDSL.

The row decoders 140A, 140B, 140C, and 140D output block selectionsignals BSEL0 to BSEL2047 for selecting one of the plurality of memoryblocks in response to the row address signal RADD of the control circuit120. Furthermore, the switching circuit groups 150A, 150B, 150C, and150D couple the global lines GSSL, GDWL1, GWL[63:0], GDWL2, and GDSL tothe local lines DSL, DWL2, WL[63:0], DWL1, and SSL of a selected memoryblock in response to the block selection signals BSEL0 to BSEL2047. Thatis, the switching circuit groups 150A, 150B, 150C, and 150D transferoperating voltages, generated by the voltage generation circuit 130, toa selected memory block in response to the block selection signals BSEL0to BSEL2047.

Meanwhile, as one memory plane is divided into the two memory banks110A, 110B, the constructions and the connection relationships of therow decoders and the switching circuit groups are also changed.

More particularly, the first and second switching circuit groups 150A,150B are disposed on both sides of the first memory bank 110A, and thethird and fourth switching circuit groups 150C, 150D are disposed onboth sides of the second memory bank 110B. Furthermore, the first rowdecoder 140A for controlling the operation of the first switchingcircuit group 150A, the second row decoder 140B for controlling theoperation of the second switching circuit group 150B, the third rowdecoder 140C for controlling the operation of the third switchingcircuit group 150C, and the fourth row decoder 140D for controlling theoperation of the fourth switching circuit group 150D, in response to therow address signal RADD, are disposed as follows. The first row decoder140A can be disposed on one side of the first switching circuit group150A, the second and third row decoders 140B, 140C can be disposedbetween the second and third switching circuit groups 150B, 150C, andthe fourth row decoder 140D can be disposed on the other side of thefourth switching circuit group 150D.

The first switching circuit group 150A includes switching circuits 155Afor coupling the local lines DSL, DWL2, WL[63:0], DWL1, and SSL of evenmemory blocks, from among the memory blocks included in the first memorybank 110A, to the global lines GSSL, GDWL1, GWL[63:0], GDWL2, and GDSL.Accordingly, the first row decoder 140A outputs the even block selectionsignals BSEL0 to BSEL2046 for selecting the even memory blocks, fromamong the block selection signals BSEL0 to BSEL2047. Accordingly, thefirst row decoder 140A can be classified as an even row decoder, and thefirst switching circuit group 150A can be classified as an evenswitching circuit group.

The second switching circuit group 150B includes switching circuits 155Bfor coupling the local lines DSL, DWL2, WL[63:0], DWL1, and SSL of oddmemory blocks, from among the memory blocks included in the first memorybank 110A, to the global lines GSSL, GDWL1, GWL[63:0], GDWL2, and GDSL.Accordingly, the second row decoder 140B outputs the odd block selectionsignals BSEL1 to BSEL2047 for selecting the odd memory blocks, fromamong the block selection signals BSEL0 to BSEL2047. Accordingly, thesecond row decoder 140B can be classified as an odd row decoder, and thesecond switching circuit group 150B can be classified as an oddswitching circuit group.

The third and fourth switching circuit groups 150C, 150D and the thirdand fourth row decoders 140C, 140D are operated in the same manner inrelation to the memory blocks MBb of the second memory bank 110B.

The page buffer group 160 includes page buffers coupled to bit linesBLs. The page buffer group 160 supplies voltage necessary to store datain a memory cell to the bit line BLs or stores data from a memory cellthrough the bit line BLs in response to the control signals PB SIGNALSof the control unit 120.

The column selection circuit 170 selects a page buffer coupled to acolumn (i.e., bit line), selected by the page buffer group 160, inresponse to the column address signal CADD of the control circuit 120and outputs data, stored in the selected page buffer, to a data line DL.Here, in cases where 8 I/O blocks are included in the memory banks 110A,110B, one column is selected from each of the I/O blocks. Accordingly,the page buffer group 160 selects 8 page buffers in response to thecolumn address signal CADD at the same time, and so data of 1 byte isoutput to the data line DL.

In the above-described semiconductor memory apparatus, one memory blockis divided into the two memory blocks MBa, MBb. Thus, the length of aword line is reduced by half, and the number of memory cells coupled tothe word line is reduced by half. Accordingly, a resistance component ofthe word line proportional to the length of the word line is reduced,and a reduction of an operating voltage supplied to a memory cell viathe word line can be reduced.

Meanwhile, since one memory block is divided into two memory blocks, thefour row decoders 140A, 140B, 140C, and 140D and the four switchingcircuit groups 150A, 150B, 150C, and 150D are required. As the number ofrow decoders and switching circuit groups is increased as describedabove, the area occupied by the row decoders and the switching circuitgroups is increased, but the area occupied by the memory banks 110A,110B is relatively reduced.

A method of solving the above problem is described below.

A region in which the first switching circuit group 150A correspondingto an even switching circuit group and a region in which the secondswitching circuit group 150B corresponding to an odd switching circuitgroup are exchanged. Furthermore, the second row decoder 140Bcorresponding to an odd row decoder is disposed instead of the first rowdecoder 140A. Thus, only the first and second even switching circuitgroups 150A, 150C are disposed between the first and second memory banks110A, 110B, and only one even row decoder 140C is disposed between theeven switching circuit groups 150A, 150C. If the even switching circuitgroups 150A, 150C are simultaneously controlled by the one even rowdecoder 140C, the number of row decoders can be reduced because thefirst row decoder 140A is not necessary.

For another example, the positions of the third and fourth switchingcircuit groups 150C, 150D may be exchanged, and the fourth row decoder140D corresponding to an odd row decoder may be disposed instead of thethird row decoder 140C. In this case, if the second row decoder 140Bcontrols the second and fourth switching circuit groups 150B, 150D atthe same time, the number of row decoders can be reduced because thethird row decoder 140C is not necessary.

Although at least four switching circuit groups and at least three rowdecoders are included in the above example, a method of further reducingthe number of switching circuit groups and row decoders is describedbelow.

FIGS. 2A to 2C are diagrams showing a semiconductor memory apparatusaccording to another exemplary embodiment of this disclosure.

Referring to FIG. 2A, the semiconductor memory apparatus includes amemory plane, a control circuit 220, a voltage generation circuit 230, arow decoder 240, switching circuit groups 250A, 250B, and 250C, a pagebuffer group 260, and a column selection circuit 270.

Two memory banks 210A, 210B included in one memory plane, the controlcircuit 220, the voltage generation circuit 230, the page buffer group260, and the column selection circuit 270 are the same as the memorybanks 110A, 110B, the control unit 120, the voltage generation circuit130, the page buffer group 160, and the column selection circuit 170described with reference to FIG. 1, and a description thereof isomitted.

In the present embodiment, a structure in which the local lines DSL,DWL2, WL[63:0], DWL1, and SSL of memory blocks MBa, MBb are coupled toglobal lines GSSL, GDWL1, GWL[63:0], GDWL2, GDSL through the switchingcircuit groups 250A, 250B, and 250C is changed. The switching circuitgroups 250A, 250B, and 250C are controlled by one row decoder 240.

More particularly, the row decoder 240 outputs block selection signalsBSEL0 to BSEL2047 for selecting one of the plurality of memory blocks inresponse to the row address signals RADD of the control circuit 220.

The first switching circuit group 250A is disposed on one side of thefirst memory bank 210A. The second switching circuit group 250B isdisposed between the first and second memory banks 210A, 210B.Furthermore, the third switching circuit group 250C is disposed on theother side of the second memory bank 210B. Here, the row decoder 240 isadjacent to the first switching circuit group 250A or the thirdswitching circuit group 250C.

The first switching circuit group 250A includes a plurality of switchingcircuits 250Ae, 250Ao. The first switching circuit group 250A couplessome (for example, GSSL, GDWL1, and GWL[31:0]) of global lines GSSL,GDWL1, GWL[63:0], GDWL2, and GDSL to some (for example, SSL, DWL1, andWL[31:0]) of the local lines DSL, DWL2, WL[63:0], DWL1, and SSL of amemory block MBa, selected from the first memory bank 210A, in responseto the block selection signals BSEL0 to BSEL2047 of the row decoder 240.That is, the first switching circuit group 250A transfers some ofoperating voltages, generated by the voltage generation circuit 230, tothe selected memory block MBa of the first memory bank 210A in responseto the block selection signals BSEL0 to BSEL2047.

The second switching circuit group 250B includes a plurality ofswitching circuits 250Be, 250Bo. The second switching circuit group 250Bcouples the remaining ones (for example, GWL[32:63], GDWL2, and GDSL) ofthe global lines GSSL, GDWL1, GWL[63:0], GDWL2, and GDSL to some (forexample, DSL, DWL2, and WL[63:32]) of the local lines DSL, DWL2,WL[63:0], DWL1, and SSL of the memory blocks MBa, MBb, selected from thefirst and second memory banks 210A, 210B, in response to the blockselection signals BSEL0 to BSEL2047 of the row decoder 240. That is, thesecond switching circuit group 250B transfers some of the operatingvoltages, generated by the voltage generation circuit 230, to the memoryblocks MBa, MBb selected from the first and second memory banks 210A,210B in response to the block selection signals BSEL0 to BSEL2047.

The third switching circuit group 250C includes a plurality of switchingcircuits 250Ce, 250Co. The third switching circuit group 250C couplessome (for example, GSSL, GDWL1, and GWL[31:0]) of the global lines GSSL,GDWL1, GWL[63:0], GDWL2, and GDSL to some (for example, SSL, DWL1, andWL[31:0]) of the local lines DSL, DWL2, WL[63:0], DWL1, and SSL of thememory block MBb, selected from the second memory bank 210B, in responseto the block selection signals BSEL0 to BSEL2047 of the row decoder 240.That is, the third switching circuit group 250C transfers some of theoperating voltages, generated by the voltage generation circuit 230, tothe memory block MBb selected from the second memory bank 210B inresponse to the block selection signals BSEL0 to BSEL2047.

As another example, the first switching circuit group 250A can couplethe global lines GDSL, GDWL2, and GWL[63:32] to the local lines DSL,DWL2, and WL[63:32] of the memory block MBa selected from the firstmemory bank 210A. The second switching circuit group 250B can couple theglobal lines GSSL, GDWL1, and GWL[31:0] to the local lines SSL, DWL1,and WL[31:0] of the memory blocks MBa, MBb selected from the first andsecond memory banks 210A, 210B. Furthermore, the third switching circuitgroup 250C can couple the global lines GDSL, GDWL2, and GWL[63:32] tothe local lines DSL, DWL2, and WL[63:32] of the memory block MBbselected from the second memory bank 210B.

As yet another example, referring to FIG. 2B, one (for example, 250C) ofthe first to third switching circuit groups 250A, 250B, and 250C maycouple the global drain select line GDSL and the global source selectline GSSL to the local drain select line DSL and the source select lineSSL of memory blocks selected from the first and second memory banks210A, 210B. In this case, the remaining switching circuit groups 250A,250B couple the remaining global lines GDWL2, DWL[63:0], and GDWL1 tothe remaining local lines DWL2, WL[63:0], and DWL1.

Although the three switching circuit groups 250A, 250B, and 250C areused in the above examples, only one switching circuit group 250A needbe used.

Referring to FIG. 2C, global lines GSSL, GDWL1, GWL[63:0], GDWL2, andGDSL may be coupled to the local lines DSL, DWL2, WL[63:0], DWL1, andSSL of memory blocks MBa, MBb selected from first and second memorybanks 210A, 210B by using only one switching circuit group 250A disposedbetween first and second memory banks 210A, 210B.

Accordingly, the operating voltages can be transferred from the voltagegeneration circuit 230 to the memory blocks MBa, MBb of the first andsecond memory banks 210A, 210B by using a small number of switchingcircuit groups and row decoders.

Meanwhile, the block selection signal BSEL0 output by the row decoder240 is transferred to the first to third switching circuit groups 250A,250B, and 250C through block selection lines BS LINE.

In a NAND flash memory device, bit lines are disposed vertically to wordlines over the word lines. Here, it is preferred that the blockselection lines BS LINE be electrically isolated from the bit lines andthe word lines and disposed between the bit lines and the word lines.

When a program operation is performed, the block selection line BS LINEtransmits the block selection signal BSEL0 of about 20 V. In cases wherethe block selection line BS LINE passes through or over the memory blockMBb disposed between the second and third switching circuit groups 250B,250C from the third switching circuit group 250C to the second switchingcircuit group 250B, interference can be generated in local word linesdisposed under the block selection line BS LINE, from among the localword lines WL[63:0] of the memory block MBb, because of the blockselection signal BSEL0 of a high level transmitted through the blockselection line BS LINE. That is, the levels of operating voltagessupplied to the local word lines disposed under the block selection lineBS LINE can be changed because of the block selection signal BSEL0,thereby generating operational errors. This problem can be solved asfollows.

FIG. 3 is a block diagram showing part of the semiconductor memoryapparatus shown in FIG. 2B. FIG. 4 is a circuit diagram showing part ofthe semiconductor memory apparatus according to another exemplaryembodiment of this disclosure.

Referring to FIGS. 3 and 4, the even memory block MBa0 of a first memorybank is disposed between the first even switching circuit 250Ae of afirst switching circuit group and the second even switching circuit250Be of a second switching circuit group, and the odd memory block MBa1of the first memory bank is disposed between the first odd switchingcircuit 250Ao of the first switching circuit group and the second oddswitching circuit 250Bo of the second switching circuit group.Furthermore, the even memory block MBb0 of a second memory bank isdisposed between the second even switching circuit 250Be of the secondswitching circuit group and the third even switching circuit 250Ce of athird switching circuit group, and the odd memory block MBb1 of thesecond memory bank is disposed between the second odd switching circuit250Bo of the second switching circuit group and the third odd switchingcircuit 250Co of the third switching circuit group.

In the above, some of first to eighth I/O memory blocks, a spare memoryblock, a repair memory block, and a flag cell block can be included inthe memory blocks of the first memory bank, and the remaining memoryblocks not included in the first memory blocks of the first memory bankcan be included in the memory blocks of the second memory bank.

Each of the switching circuits includes switching elements (that is,transistors) for coupling the global lines GSSL, GDWL1, GWL[63:0],GDWL2, and GDSL to the respective local lines DSL, DWL2, WL[63:0], DWL1,and SSL in response to the block selection signal.

The first to third even switching circuits 250Ae, 250Be, and 250Ce areoperated in response to the block selection signal BSEL0 received fromthe row decoder 240 through the block selection line BS LINE. When theblock selection line BS LINE passes through or over the memory blocksMBa0, MBb0, voltage supplied to the local lines disposed under the blockselection line BS LINE is changed because of capacitance coupling due tocapacitance between the block selection line BS LINE and some of thelocal lines WL[63:0] of the memory blocks MBa0, MBb0.

In order to solve the problem, the route of the block selection line BSLINE is changed so that the block selection line BS LINE passes throughor over a memory block, neighboring a memory block disposed between theswitching circuits, between the switching circuits. For example, theroute of the block selection line BS LINE can be set up so that theblock selection line BS LINE passes through or over the memory blockMBa1, neighboring the memory block MBa0 disposed between the first andsecond even switching circuits 250Ae, 250Be, between the first andsecond even switching circuits 250Ae, 250Be. For example, the route ofthe block selection line BS LINE can be set up so that the blockselection line BS LINE passes through or over the memory block MBb1,neighboring the memory block MBb0 disposed between the second and thirdeven switching circuits 250Be, 250Ce, between the second and third evenswitching circuits 250Be, 250Ce.

Although the even memory block MBa0 is selected and the odd memory blockMBa1 is not selected, voltage supplied to local word lines disposedunder the block selection line BS LINE, from among the local word linesWL[63:0] of the unselected memory block MBa1, can be changed because ofthe block selection signal BSEL0 of a high voltage supplied to the blockselection line BS LINE passing through or over the unselected memoryblock MBa1. Consequently, electrical characteristics (for example,threshold voltage) of memory cells can be changed. Such a phenomenon isincreased with an increasing area in which the block selection line BSLINE overlaps with the local word lines. Accordingly, in order tominimize the area in which the block selection line BS LINE overlapswith the local word lines, it is preferred that the route of the blockselection line BS LINE be set up meanderingly (that is, in zigzags) overthe neighboring memory block MBa1. More particularly, the route of theblock selection line BS LINE is set up such that a portion passingthrough horizontally to the local word lines WL[63:0] of the memoryblock MBa1 and a portion passing through vertically to the local wordlines WL[63:0] of the memory block MBa1, are repeated over the memoryblock MBa1. It is preferred that the route of the block selection lineBS LINE be set up so that the portion passing through vertically to thelocal word lines WL[63:0] is repeated for every 1500 to 2500 columns(that is, bit lines).

In this case, although the block selection line BS LINE passes throughor over the neighboring memory block MBa1, interference can beminimized.

Meanwhile, since the block selection line BS LINE passes through or overa memory block, the local word lines of an unselected memory block maynot rise up to a target voltage when an erase operation is performed.For example, when the erase operation is performed, a ground voltage(for example, 0 V) can be supplied to the local word lines of a selectedmemory block and the local word lines of an unselected memory block canbe set in a floating state. Furthermore, when an erase voltage issupplied to a substrate (or P well), memory cells coupled to the localword lines of the selected memory block are erased. Here, a potential ofthe local word lines of the unselected memory block have to rise up to15 V to 20 V because of capacitance coupling generated by the erasevoltage. Meanwhile, for example, in cases where an erase operation isperformed in the state where both the memory blocks MBa0, MBa1 are notselected, but a memory block (not shown) is selected, 0 V can besupplied to the block selection line BS LINE passing through or over thememory block MBa1. The voltage 0 V supplied to the block selection lineBS LINE hinders voltage of the local word lines of the memory block MBa1from rising. For this reason, since a potential of the local word linesWL[63:0] of the unselected memory block MBa1 is not sufficiently high,memory cells coupled to the local word lines WL[63:0] of the unselectedmemory block MBa1 can be erased.

In order to solve the problem, when an erase signal is inputted, thelocal word lines WL[63:0] of the memory blocks are precharged to 0.5 Vto 6 V and then maintained in a floating state, before an erase pulsefor an erase operation is supplied to the substrate (or P well).Furthermore, in response to the block selection signals generated by therow decoder, voltage precharged to the local word lines of a selectedmemory block is discharged, and the local word lines of an unselectedmemory block is maintained in a floating state. In other words, theground voltage 0 V is supplied to the local word lines of the selectedmemory block. Here, only the local word lines of the unselected memoryblocks can be selectively precharged. Next, the erase pulse for theerase operation is supplied to the substrate (or P well).

In this case, although the voltage 0 V supplied to the block selectionline BS LINE hinders voltage of the local word lines from rising,voltage of the local word lines WL[63:0] can be raised up to a targetvoltage because the erase operation is performed with the local wordlines WL[63:0] being precharged to 0.5 V to 6 V.

In the above case, the number of switching circuit groups is increasedbecause the memory block is divided and so the area in which memoryblocks will be formed can be reduced. For the above reason, the designof the row decoders is changed in order to reduce the area occupied bythe row decoders. This is described in more detail below.

FIG. 5 is a block diagram of a semiconductor memory apparatus includinga row decoder according to an exemplary embodiment of this disclosure.

Referring to FIG. 5, the semiconductor memory apparatus includes amemory cell array (not shown), including a plurality of memory blocks,and the row decoder. The memory cell array includes the plurality ofmemory blocks, which can be classified into a plurality of block groups.

Here, the row decoder includes a first subdecoder 510 and a secondsubdecoder 522. The first subdecoder 510 is configured to output a firstselection signal G BLOCK for selecting one of the block groups of thememory cell array in response to an enable signal BLK_EN and first rowaddress signals XB, XC, and XD.

The second subdecoder 522 is configured to output a second selectionsignal E BLOCK or a third selection signal O BLOCK for selecting one ofa pair of even and odd memory blocks from a block group, selected by thefirst subdecoder 510, in response to the first selection signal G BLOCKand second row address signals XA_E, XA_O.

The first row address signals include first signals, second signals, andthree signals XB, XC, and XD. The second signals are generated bydecoding first block address signals ADD[21:23] used to classify memoryblocks into a plurality of first subblock groups. The second signals aregenerated by decoding second block address signals ADD[24:26] used toclassify the first subblock groups into a plurality of second subblockgroups. The three signals XB, XC, and XD are selected one by one fromamong third signals which are generated by decoding third block addresssignals ADD[27:29] used to classify the second subblock groups into aplurality of third subblock groups. Furthermore, the second row addresssignals XA_E, XA_O include the two fourth signals XA_E, XA_O used toselect a pair of even and odd memory blocks and selected from amongfourth signals. Here, the fourth signals are generated by decodingfourth block address signals ADD[30:32] used to select a memory blockfrom the third subblock groups. Such a signal relationship can bechanged according to the details of the design, such as the number ofmemory blocks.

Furthermore, the semiconductor memory apparatus of FIG. 5 can furtherinclude a first output circuit 524 for outputting an even blockselection signal BSEL0 in response to the second selection signal EBLOCK and a second output circuit 526 for outputting an odd blockselection signal BSEL1 in response to the third selection signal OBLOCK. The first output circuit 524 outputs the even block selectionsignal BSEL0 having a higher voltage level than the second selectionsignal E BLOCK. The second output circuit 526 outputs the odd blockselection signal BSEL1 having a higher voltage level than the thirdselection signal O BLOCK.

The first and second subdecoders 510, 522, and the first and secondoutput circuits 524, 526 are provided in each pair of even and oddmemory blocks. Furthermore, the second subdecoder 522 and the first andsecond output circuits 524, 526 construct even/odd decoder 520 forselecting an even memory block or an odd memory block, from among thepair of even and odd memory blocks of a selected memory block.

The circuit construction and operation of the above-described rowdecoder is described in more detail below.

FIG. 6 is a circuit diagram of the semiconductor memory apparatusincluding the row decoder according to an exemplary embodiment of thisdisclosure.

Referring to FIG. 6, the first subdecoder 510 includes a firsttransistor EP1, a second transistor EN1, third transistors N1, N2, andN3, and an inverter INV1. The first transistor EP1 is operated inresponse to an enable signal BLK_EN and coupled between a power supplyvoltage terminal and a first node NODE1. The second transistor EN1 isoperated in response to the enable signal BLK_EN and coupled to a groundterminal. The third transistors N1, N2, and N3 are respectively operatedin response to first row address signals XB, XC, and XD and coupledbetween the second transistor EN1 and the first node NODE1. The inverterINV1 is configured to output the first selection signal G BLOCKaccording to a potential of the first node NODE1.

The first subdecoder 510 can further include a transistor group 512 forpreventing a potential of the first node NODE1 from becoming a highlevel or a low level more quickly when the first node NODE1 becomes ahigh level. The gates of transistors of the transistor group 512 areoperated in response to the output signal of the inverter INV1.

The second subdecoder 522 includes a first logic gate NAND1 and a secondlogic gate NAND2. The first logic gate NAND1 outputs the secondselection signal E BLOCK, in response to the first selection signal GBLOCK and the second row address signal XA_E. The second logic gateNAND2 outputs the third selection signal O BLOCK, in response to thefirst selection signal G BLOCK and an inverted signal of the second rowaddress signal XA_O.

The first output circuit 524 includes an inverter INV2, a transistor N6,a transistor N5, a transistor N4, and a transistor P2. The inverter INV2inverts a logical level of the second selection signal E BLOCK. Thetransistor N6 is operated in response to the second selection signal EBLOCK and coupled between a ground terminal and the output terminal SELof the inverter INV2. The transistor N5 is operated in response to anenable signal PRE_EN and coupled between the output terminal of theinverter INV2 and the output node of the even block selection signalBSEL0. The transistor N4 is coupled to the input terminal of a pumpingvoltage VBLC and operated according to voltage of the output node. Thetransistor P2 is operated in response to the second selection signal EBLOCK and coupled between the transistor N4 and the output node. Thefirst output circuit 524 can further include switching circuits N7, N8.The switching circuits N7, N8 transmit a ground voltage SEL GND to thedrain select line DSL and the source select line SSL of a correspondingmemory block in response to the second selection signal E BLOCK.

The second output circuit 526 has the same construction as the firstoutput circuit 524 except that it is operated in response to the thirdselection signal O BLOCK, and a description thereof is omitted.

The transistors N4, N9 preferably are High Voltage Depletion (HVD) NMOStransistors. The transistors P2, P3 preferably are high voltage PMOStransistors. The transistors N5, N7, N8, N10, N12, and N13 preferablyare high voltage NMOS transistors. In particular, the transistors N5,N10 are used to prevent the inverters INV2, INV3 or the transistors N6,N11 from being broken down when the block selection signals BSEL0, BSEL1of a high voltage are output and are always turned on when a programoperation is performed.

The row decoder as constructed above is provided in each pair of evenand odd memory blocks including the even and odd memory blocks fromamong a plurality of memory blocks. Accordingly, since a small number ofrow decoders are included as compared with a case where the row decoderis provided every memory block, the area occupied by the row decoderscan be reduced.

Hereinafter, the operation of the row decoder according to theembodiment of this disclosure is described below.

When the enable signal BLK_EN is inputted to the first subdecoder 510and one memory block group is selected in response to the first rowaddress signals XB, XC, and XD, the first node NODE1 becomes a lowlevel. The inverter INV1 inverts a signal of a low level and outputs thefirst selection signal G BLOCK of a high level.

When the first selection signal G BLOCK and the second even row addresssignal XA_E of a high level are inputted, the second subdecoder 522outputs the second selection signal E BLOCK of a low level in order toselect an even memory block from the selected memory block group. Thatis, the second selection signal E BLOCK is activated. Furthermore, whenthe first selection signal G BLOCK and the second odd row address signalXA_O of a high level are inputted, the second subdecoder 522 output thethird selection signal O BLOCK of a low level in order to select an oddmemory block. That is, the third selection signal O BLOCK is activated.

When the second selection signal E BLOCK of a low level is inputted, thetransistor P2 is turned on in response to the second selection signal EBLOCK, and the transistor N4 is turned on in response to the outputsignal of the inverter INV2. Accordingly, the first output circuit 524outputs the pumping voltage VBLC as the even block selection signalBSEL0.

When the third selection signal O BLOCK of a low level is inputted, thetransistor P3 is turned on in response to the third selection signal OBLOCK, and the transistor N9 is turned on in response to the outputsignal of the inverter INV3. Accordingly, the second output circuit 526outputs the pumping voltage VBLC as the odd block selection signalBSEL1.

In accordance with the embodiments of this disclosure, a difference inthe level of an operating voltage supplied to memory cells coupled to aword line is reduced, and a shift in an operating voltage supplied to aword line due to interference between the word line and a line isreduced. Accordingly, electrical characteristics and reliability of asemiconductor memory apparatus can be improved. Furthermore, since thesize of a row decoder is reduced, a reduction of the area occupied bymemory blocks can be prevented and so the degree of integration can beimproved.

What is claimed is:
 1. A semiconductor memory apparatus, comprising:first and second memory blocks; first and second local line groupsassociated with each of the first and second memory blocks, wherein eachof the first and second memory blocks comprise semiconductor elementscoupled to their respective first and second local line groups; firstand second global line groups; a first switching circuit configured tocouple the first global line group to the first local line group of thefirst memory block in response to a block selection signal; a secondswitching circuit configured to couple the second global line group tothe second local line groups of the first and second memory blocks inresponse to the block selection signal; and a third switching circuitconfigured to couple the first global line group to the first local linegroup of the second memory block in response to the block selectionsignal.
 2. The semiconductor memory apparatus of claim 1, wherein: thefirst memory block comprises some of first to eighth I/O memory blocks,a spare memory block, a repair memory block, and a flag cell block, andthe second memory block comprises memory blocks other than the memoryblocks included in the first memory block.
 3. The semiconductor memoryapparatus of claim 1, wherein the first memory block and the secondmemory block form one plane.
 4. The semiconductor memory apparatus ofclaim 1, wherein: the first memory block is disposed between the firstand second switching circuits, and the second memory block is disposedbetween the second and third switching circuits.
 5. The semiconductormemory apparatus of claim 1, wherein: the first global line groupcomprises a first global dummy word line, a first global word line groupand one of a global source select line and a global drain select line,the second global line group comprises a second global dummy word line,a second global word line group and the other of the global sourceselect line and the global drain select line, the first local line groupcomprises a first local dummy word line, first local word lines and oneof a local source select line and a local drain line, and the secondlocal line group comprises a second local dummy word line, second localword lines and the other of the local source select line and the localdrain line.
 6. The semiconductor memory apparatus of claim 1, whereinone of the first to third switching circuits couples a global drainselect line and a global source select line to a local drain select lineand a local source select line of the first and second memory blocks. 7.The semiconductor memory apparatus of claim 6, wherein: the first globalline group comprises a first global dummy word line and a first globalword line group, the second global line group comprises a second globaldummy word line and a second global word line group, the first localline group comprises a first local dummy word line, and first local wordlines, and the second local line group comprises a second local dummyword line and second local word lines.